Alliance Memory is a worldwide fabless manufacturer of legacy memory products that are pin for pin drop-in replacements for SRAM and DRAM ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) synchronous DRAMs.
A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM and DRAM products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, industrial, and consumer markets.
High-Speed CMOS Double Data Rate 2
Synchronous DRAM (DDR2 SDRAM)
Available from a very limited number of suppliers, the AS4C128M16D2 features a high 2-Gb density in the 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA package.
Alliance Memory Partners with Micron Semiconductor to Extend 512M SDRAM Product Life Cycle, 32M X 16 and 16M X 8 Density.
As a supplier of legacy memory ICs, we’re acutely aware of the need for all our customers to simplify their supply chains as much as possible.
MICRON 512-MB SDRAMS
MONOLITHIC HIGH-SPEED, LOW-VOLTAGE 1G X 8 CMOS DDR3L SDRAM IN 78-BALL FBGA
256M HIGH-SPEED CMOS SDRAMS IN THE 86-PIN TSOP